Asian Journal of Physics Vol. 35, Nos 4 – 6 (2026) 167-180

Optimization of series resistance and device area in P3HT: PCBM-based organic solar cell devices

Mamta Rawat and Pinaki Laha
University Department of Physics, B R Ambedkar Bihar University, Muzaffarpur- 842 001, India

Here, we investigate the impact of series resistance and device area on a P3HT: PCBM-based organic solar cell. Electrical simulations were performed using Fluxim-SETFOS 5.5 to investigate the ITO/PEDOT:PSS/P3HT:PCBM/Al organic solar cell structure. The study examined how changes in series resistance and device area influence performance measures like power conversion efficiency (PCE) and fill factor (FF). Series resistance was varied from 500 Ω to 3000 Ω. The short-circuit current density (JSC) decreases as series resistance increases, indicating that higher series resistance hinders charge extraction and leads to reduced JSC. Specifically, PCE increased from 0.79 to 0.98% for a 130 nm active layer and from 0.79 to 1.40% for a 100 nm active layer, while FF increased from 0.36 to 0.42 for a 130 nm active layer and from 0.36 to 0.48 for a 100 nm active layer. PCE decreases as series resistance and device area increase. The results highlight the importance of controlling series resistance and device area in P3HT: PCBM-based organic solar cells. © Anita Publications. All rights reserved.
Doi: 10.54955/AJP.35.4-6.2026.167-180
Keywords: Series resistance (RS), device area, P3HT:PCBM, fill factor (FF), SETFOS, and power conversion efficiency (PCE).

Peer Review Information
Method: Single- anonymous; Screened for Plagiarism? Yes
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