Raman spectroscopy of semiconductor NWs: Optical resonance effects

Irene Mediavilla, Jose Luis Pura, Julián Anaya, and Juan Jiménez
GdS Optronlab, Ed. LUCIA, Paseo de Belén, 19, Universidad de Valladolid, 47011 Valladolid, Spain

Semiconductor nanowires (NWs) constitute a technological platform for the future nanoscale devices. Heterojunctions turn out to be essential for a great variety of devices. In the case of NWs one can distinguish axial and radial heterojunctions. Usually, NW axial heterojunctions are not abrupt because of the reservoir effect in the catalysts droplets. Understanding the optical properties of heterostructured NWs is a fundamental step for their possible applications on future technologies. The characterization of axially heterostructured NWs can be done by micro-Raman spectroscopy. NWs need to be characterized individually, because the characterization of ensembles of NWs only supplies an average view over the NW population. Fortunately, the interaction of light with NWs allows to reach an intense Raman signal, as the NWs behave as optical antennas. There are resonances associated with the diameter, and resonances at the axial heterojunctions, which are revealed by micro Raman spectroscopy. In order to unveil the underlying physics of the light/NW interaction, the complex-valued electromagnetic (EM) field distribution induced inside heterostructured NWs under light exposure is studied. We present in this work a study of the effect of Raman enhancement on axially heterostructured semiconductor nanowires (NWs). © Anita Publications. All rights reserved.
Keywords: Nanowires, Heterojunctions, Light/NW interaction, Micro-Raman spectroscopy

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