Tip-enhanced Raman spectroscopy of single semiconducting nanostructures

Avinash Patsha,^1,2*, A K Sivadasan^1,3, Santanu Parida^1,4, Raktima Basu,^1,5,6 and Sandip Dhara^1,6*
1Surface and Sensors Studies Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102, India
²Department of Materials Science and Engineering, Tel Aviv University, Tel Aviv, Israel.
³Thin Films and Plasmonics Group, Centre for Materials for Electronics Technology (C-MET), Thrissur-680 581, (Kerala), India
⁴Department of Physics, Govt. Women’s College, Baripada-757 001, (Orissa), India
⁵Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, Kolkata- 700 064, India
⁶A CI of Homi Bhabha National Institute, Mumbai- 400 094, India

Tip-enhanced Raman spectroscopic (TERS) technique is reviewed for studying single semiconductor nanostructures along with different possible modes of operation in various optical arrangements. The role of scattering efficiency in the nanospectroscopic localized study using TERS in the near-field was explored for different inorganic covalent and partially ionic bonded Si, GaN and AlN single nanowires. A localized study was also performed for phase identification and dopant analysis in a single GaN nanowire. In the polarized TERS measurement, metal-insulator phase transition, along with the observation of spin-wave in a single VO2 nanorod, was also explored. The size-dependent phonon population of single Si nanowires is also examined using TERS in the context of carrier depletion in these nanostructures. © Anita Publications. All rights reserved. doi:10.54955/AJP.33.1-2.2024.17-26.
Keywords: Tip-enhanced Raman Spectroscopy, Si Nanowires, VO2, GaN, Near-field spectroscopy, TERS, Semiconducting
nanostructures.

Peer Review Information
Method: Single- anonymous; Screened for Plagiarism? Yes
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